Manufacturing process of gate stack structure with etch stop layer

ABSTRACT

A manufacturing process of an etch stop layer is provided. The manufacturing process includes steps of providing a substrate; forming a gate stack structure over the substrate, wherein the gate stack structure at least comprises a dummy polysilicon layer and a barrier layer; removing the dummy polysilicon layer to define a trench and expose a surface of the barrier layer; forming a repair layer on the surface of the barrier layer and an inner wall of the trench; and forming an etch stop layer on the repair layer. In addition, a manufacturing process of the gate stack structure with the etch stop layer further includes of forming an N-type work function metal layer on the etch stop layer within the trench, and forming a gate layer on the N-type work function metal layer within the trench.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a divisional application claiming benefitfrom a parent U.S. patent application bearing Ser. No. 13/094,953 filedon Apr. 27, 2011, now pending, contents of which is hereby incorporatedby reference herein in its entirety and made a part of thisspecification.

FIELD OF THE INVENTION

The present invention relates to a manufacturing process of a gate stackstructure with an etch stop layer, and more particularly to amanufacturing process of a gate stack structure with an etch stop layerformed at high formation speed and high coverage percentage.

BACKGROUND OF THE INVENTION

During the process of fabricating a gate stack structure of acomplementary metal-oxide-semiconductor (CMOS), tantalum nitride (TaN)is usually used as an etch stop layer to prevent from over-etching awork function metal layer. However, since the efficacy of using suchetch stop layer to prevent from over-etching the work function metallayer is usually unsatisfied, a barrier layer underneath the etch stoplayer may be lost. Under this circumstance, the performance, yield andreliability of the final product will be adversely affected.

SUMMARY OF THE INVENTION

Therefore, the object of the present invention is to provide a gatestack structure with an etch stop layer. For repairing a damaged surfaceof a barrier layer, a repair layer whose material and electricalproperty are similar to the barrier layer is formed on the barrierlayer. By means of the repair layer, an etch stop layer is formed withina trench of the gate stack structure at increased formation speed andthickness in a subsequent process. As a consequence, a current leakageproblem is eliminated.

In accordance with an aspect, the present invention provides a gatestack structure with an etch stop layer. The gate stack structure isformed over a substrate. A spacer is formed on a sidewall of the gatestack structure. The gate stack structure includes a gate dielectriclayer, a barrier layer, a repair layer and the etch stop layer. The gatedielectric layer is formed on the substrate. The barrier layer is formedon the gate dielectric layer. The barrier layer and an inner sidewall ofthe spacer collectively define a trench. The repair layer is formed onthe barrier layer and an inner wall of the trench. The etch stop layeris formed on the repair layer.

In accordance with another aspect, the present invention provides amanufacturing process of an etch stop layer. Firstly, a substrate isprovided. A gate stack structure is formed over the substrate, whereinthe gate stack structure at least comprises a dummy polysilicon layerand a barrier layer. The dummy polysilicon layer is removed to define atrench and expose a surface of the barrier layer. A repair layer isformed on the surface of the barrier layer and an inner wall of thetrench. Afterwards, an etch stop layer is formed on the repair layer.

In accordance with another aspect, the present invention provides amanufacturing process of a gate stack structure with an etch stop layer.After the etch stop layer is formed on the repair layer, an N-type workfunction metal layer is formed on the etch stop layer within the trench,and then a gate layer is formed on the N-type work function metal layerwithin the trench.

BRIEF DESCRIPTION OF THE DRAWINGS

The above objects and advantages of the present invention will becomemore readily apparent to those ordinarily skilled in the art afterreviewing the following detailed description and accompanying drawings,in which:

FIG. 1 schematically illustrates a gate dielectric layer, a barrierlayer and a dummy polysilicon layer formed on a substrate;

FIG. 2 schematically illustrates a gate stack structure formed over thesubstrate and a contact etch stop layer and an interlayer dielectriclayer formed over the gate stack structure;

FIG. 3 schematically illustrates the gate stack structure whose dummypolysilicon layer is removed;

FIG. 4 schematically illustrates a repair layer and an etch stop layerformed within the trench of the gate stack structure; and

FIG. 5 schematically illustrates an N-type work function metal layer anda low-resistance metal layer formed within the trench of the gate stackstructure.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention will now be described more specifically withreference to the following embodiments. It is to be noted that thefollowing descriptions of preferred embodiments of this invention arepresented herein for purpose of illustration and description only. It isnot intended to be exhaustive or to be limited to the precise formdisclosed.

FIG. 1 schematically illustrates a gate dielectric layer, a barrierlayer and a dummy polysilicon layer formed on a substrate. FIG. 2schematically illustrates a gate stack structure formed over thesubstrate and a contact etch stop layer and an interlayer dielectriclayer formed over the gate stack structure. FIG. 3 schematicallyillustrates the gate stack structure whose dummy polysilicon layer isremoved. FIG. 4 schematically illustrates a repair layer and an etchstop layer formed within the trench of the gate stack structure. FIG. 5schematically illustrates an N-type work function metal layer and alow-resistance metal layer formed within the trench of the gate stackstructure.

Hereinafter, a gate stack structure with an etch stop layer and amanufacturing process thereof will be illustrated with reference toFIGS. 1-5.

Please refer to FIG. 1, which schematically illustrates a gatedielectric layer, a barrier layer and a dummy polysilicon layer formedon a substrate. Firstly, a substrate 10 with a plurality of isolationdevices 102 is provided. Then, a high-k gate dielectric layer 12 isformed on the substrate 10 by chemical vapor deposition (CVD), lowpressure chemical vapor deposition (LPCVD), atomic layer deposition(ALD) or physical vapor deposition (PVD). In an embodiment, thedielectric constant of the high-k gate dielectric layer 12 is greaterthan 4. The high-k gate dielectric layer 12 is made of siliconoxynitride, metal oxide or metal silicon oxide such as hafnium oxide,hafnium silicon oxide, lanthanum oxide, zirconium oxide, tantalum oxideor aluminum oxide. In addition, an interfacial layer (not shown) such assilicon oxide layer is optionally formed underneath the gate oxide layer12.

Then, a barrier layer 14 and a dummy polysilicon layer 16 aresequentially formed on the gate dielectric layer 12. The barrier layer14 is made of titanium nitride (TiN) or tantalum nitride (TaN) or thecombination of both. In addition, the thickness of the barrier layer 14formed on the gate dielectric layer 12 is in the range between 15angstroms and 25 angstroms. A mask layer (not shown) can be formedoptionally over the dummy polysilicon layer 16, and the mask layer ismade of silicon nitride, silicon oxide, silicon oxynitride or siliconcarbide.

Please refer to FIG. 2, which schematically illustrates a gate stackstructure formed over the substrate and a contact etch stop layer and aninterlayer dielectric layer formed over the gate stack structure. Then,a patterned photoresist layer (not shown) is formed on the dummypolysilicon layer 16 of the resulting structure FIG. 1. By the patternedphotoresist layer, the locations of the gate stack structures of theNMOS and the PMOS of a CMOS are defined. Then, an etching process isperformed to sequentially remove portions of the dummy polysilicon layer16, the barrier layer 14 and the gate dielectric layer 12. Consequently,a gate stack structure 20 is formed over the substrate 10. As previouslydescribed, if the etch stop layer is used to prevent from over-etchingthe P-type work function metal layer of the gate stack structure of theNMOS, the quality of the CMOS is deteriorated. In other words, thepresent invention is aimed at the gate stack structure of the NMOS.However, the description of the gate stack structure of the PMOS will beomitted.

Please refer to FIG. 2 again. Then, an ion-implanting process (notshown) is performed to form a source region 21 a and a drain region 21 bin the substrate 10 and beside the gate stack structure 20 by using thegate stack structure 20 and spacer 22 as a mask. Then, a contact etchstop layer (CESL) 24 is formed on the substrate 10, the gate stackstructure 20 and the sidewall of the spacer 22. Then, an interlayerdielectric layer (ILD) 26 is formed on the contact etch stop layer 24.Then, a planarization process is performed to remove portions of theinterlayer dielectric layer 26 and the contact etch stop layer 24 toexpose the surface of the dummy polysilicon layer 16 of the gate stackstructure 20.

Please refer to FIG. 3, which schematically illustrates the gate stackstructure whose dummy polysilicon layer is removed. Then, an etchingprocess is performed to remove the dummy polysilicon layer 16 of thegate stack structure 20. Consequently, a trench 32 is formed and asurface 14 a of the barrier layer 14 is exposed. In an embodiment, theetching process includes a dry etching process of partially removing thedummy polysilicon layer 16 of the gate stack structure 20 and a wetetching process to completely remove the remaining dummy polysiliconlayer 16. After the etching process is performed, the surface 14 a ofthe barrier layer 14 is exposed, and the trench 32 is formed within thegate stack structure 20. The etchant solution used in the wet etchingprocess includes but is not limited to TMAH (tetramethylammoniumhydroxide) or NH₄OH (ammonium hydroxide). The present invention is notlimited to completely remove the dummy polysilicon layer 16 by usingindividual dry etching process or individual wet etching process.

However, during the process of removing the dummy polysilicon layer 16,if the surface 14 a of the barrier layer 14 is eroded by the etchantsolution or reacted with the etchant solution, the surface 14 a of thebarrier layer 14 may be damaged or a portion of the dummy polysiliconlayer 16 (not shown) may remain on the surface 14 a of the barrier layer14. The damaged surface 14 a of the barrier layer 14 or the remainingdummy polysilicon layer 16 is detrimental to a subsequent step offorming an etch stop layer 34 on the barrier layer 14 because theformation speed is low and the coverage percentage is insufficient.

Please refer to FIG. 4. For increasing the formation speed and thecoverage percentage of the etch stop layer 34, after the dummypolysilicon layer 16 of the gate stack structure 20 is removed and thesurface 14 a of the barrier layer 14 is exposed, a repair layer 36 isformed on an inner wall of the trench 32 of the gate stack structure 20(i.e. the inner sidewall of the spacer 22) and the surface 14 a of thebarrier layer 14. The material and electrical property of the repairlayer 36 are similar to those of the barrier layer 14. For example, therepair layer 36 is made of titanium nitride (TiN) or titanium (Ti). Inaddition, the thickness of the repair layer 36 is in the range between 7angstroms and 15 angstroms. Then, an etch stop layer 38 is formed on therepair layer 36 by an atomic layer deposition process. For example, theetch stop layer 38 is made of tantalum nitride (TaN).

As previously described in the prior art, in a case that no repair layer36 is formed on the barrier layer 14, the thickness of the etch stoplayer (not shown) overlying the barrier layer 14 is relatively thinner(e.g. 10 angstroms). On the other hand, in a case that the repair layer36 is formed on the barrier layer 14, the etch stop layer 38 formed onthe repair layer 36 has a thickness in the range between 15 angstromsand 25 angstroms. That is, after the repair layer 36 is formed on thebarrier layer 14 of the gate stack structure 20, the etch stop layer 38has increased formation speed, thickness and coverage percentage.

Moreover, after the etch stop layer 38 formed on the repair layer 36, aP-type work function metal layer (not shown) is further deposited on theetch stop layer 38. Generally, the P-type work function metal layer ismade of titanium nitride (TiN). For the NMOS, an etching process isperformed to remove the P-type work function metal layer at thepredetermined location of the gate stack structure of the NMOS. Then, anN-type work function metal layer 40 is formed on the etch stop layer 38within the trench 32. For example, the N-type work function metal layer40 is made of hafnium, titanium, tantalum, aluminum or an alloy thereof.Then, a gate layer 50 such as a low-resistance metal layer (e.g. analuminum layer) is filled into the trench 32. The resulting structure ofthe NMOS of the CMOS is shown in FIG. 5.

From the above description, the present invention provides a gate stackstructure with an etch stop layer and a manufacturing process thereof.By means of the repair layer formed on the barrier layer, the etch stoplayer can be formed within the trench of the gate stack structure atincreased formation speed and coverage percentage. As a consequence, acurrent leakage problem is eliminated and the device reliability isenhanced.

While the invention has been described in terms of what is presentlyconsidered to be the most practical and preferred embodiments, it is tobe understood that the invention needs not be limited to the disclosedembodiment. On the contrary, it is intended to cover variousmodifications and similar arrangements included within the spirit andscope of the appended claims which are to be accorded with the broadestinterpretation so as to encompass all such modifications and similarstructures.

What is claimed is:
 1. A manufacturing process of an etch stop layer,comprising steps of: providing a substrate; forming a gate stackstructure over the substrate, wherein the gate stack structure at leastcomprises a dummy polysilicon layer and a barrier layer; removing thedummy polysilicon layer to define a trench and exposing a surface of thebarrier layer; forming a repair layer on the surface of the barrierlayer and an inner wall of the trench; and forming an etch stop layer onthe repair layer.
 2. The manufacturing process according to claim 1,wherein the step of removing the dummy polysilicon layer comprisessub-steps of: performing a first etching process to partially remove thedummy polysilicon layer; and performing a second etching process tocompletely remove the remaining dummy polysilicon layer of the gatestack structure.
 3. The manufacturing process according to claim 2,wherein the first etching process is a dry etching process.
 4. Themanufacturing process according to claim 2, wherein the second etchingprocess is a wet etching process.
 5. The manufacturing process accordingto claim 1, wherein the repair layer has a thickness in the rangebetween 7 angstroms and 15 angstroms.
 6. The manufacturing processaccording to claim 1, wherein the repair layer is made of titaniumnitride (TiN) or titanium (Ti).
 7. The manufacturing process accordingto claim 1, wherein the etch stop layer is formed on the repair layer byan atomic layer deposition process.
 8. The manufacturing processaccording to claim 1, wherein the etch stop layer is made of tantalumnitride (TaN).
 9. The manufacturing process according to claim 1,wherein the etch stop layer has a thickness in the range between 15angstroms and 25 angstroms.
 10. The manufacturing process according toclaim 1, wherein the barrier layer is made of titanium nitride (TiN).11. The manufacturing process according to claim 1, wherein the barrierlayer has a thickness in the range between 15 angstroms and 25angstroms.
 12. A manufacturing process of a gate stack structure withthe etch stop layer manufactured according to claim 1, wherein after thestep of forming the etch stop layer on the repair layer, themanufacturing process of the gate stack structure further comprisessteps of: forming an N-type work function metal layer on the etch stoplayer within the trench; and forming a gate layer on the N-type workfunction metal layer within the trench.
 13. The manufacturing processaccording to claim 12, wherein the N-type work function metal layer ismade of hafnium, titanium, tantalum, aluminum or an alloy thereof.